The electronic configuration of carbon is 1s22s22p2,
i.e. with four valence electrons spread in the s and p orbitals.
In order to create covalent bonds in diamond, the s orbital mixes
with the three p orbitals to form sp3 hybridization. The four
valence electrons are thus equally distributed among the sp3orbitals, while each orbital points to one of the four corners of a
tetrahedron. The tetrahedral structure, together with the highly
directed charge density, give strength and stability to the
bonds. Consequently, all the bonds in diamond are of the same length
(1.54
), with the same bond angle (109.47o).
Natural diamond can be divided into four types, according to the
percentage and kind of impurities they contain, mainly nitrogen and
boron. Type IIa diamond is the purest natural diamond and contains
very few nitrogen atoms, of the order of 1018 cm-3, while
the atomic density of diamond is 1.77
cm-3. It
has a high electronic mobility of 1800 cm2/V sec at room
temperature, compared to 1500 cm2/V sec in silicon. The donor level
associated with nitrogen lies relatively deep, at
1.7 eV, while
the band gap in diamond is 5.47 eV. Diamond is an insulator at room
temperature, with a resistivity larger than 10
cm.
Type IIb natural diamond contains boron, with a density of 1017cm-3. It has a p-type conductivity, with an activation energy of
0.37 eV. The hole mobility measured at room temperature is
1500
cm2/V sec, compared to 450 cm2/V sec in silicon.
In Type Ib natural diamond the concentration of nitrogen is
cm-3, with a resistivity similar to that of
type IIa diamond at room temperature, but much lower at high
temperature. A very low electronic mobility was measured at room
temperature, of the order of 100 cm2/V sec.
Finally, type Ia natural diamond has the highest concentration of
nitrogen, namely
cm-3. However the nitrogen atoms
can appear not only as substitutional impurities but also as
aggregates in the form of platelets or adjacent pairs. In that case,
in addition to the 1.7 eV energy level, another level at
4 eV
below the conduction band exits.
In the graphite crystal, the s orbital mixes with two p orbitals
only, and each of the new three sp2 orbitals points to one of the
three vertices of a triangle which lies in the x-y plane (for
instance). Three electrons occupy these orbitals and one electron
stays in the pz orbital which is directed perpendicular to the
x-y plane. Hence, the carbon atoms are bonded by three
bonds (the charge density lies between two atoms) and one
bond
(the charge density is concentrated above and under the x-y plane,
perpendicular to the atomic bond). Since there is no preference as to
which atom the pz-electron should bond to, the bond formed (
bond) with all three neighbors is weaker than the
bonds,
this electron is more free to move and contributes to conduction.
Furthermore, the
bond stabilizes the structure and ``locks'' it
in the plane. The whole crystal is made of sheets held together by
weak Van der Waals forces, separated by a distance of 3.40 Å. This
gives softness to the structure [1,2].
The stable bonding configuration of carbon at NTP is graphite, as
shown in figure 2.1, with an energy difference between the
graphite and the diamond of
0.02 eV per atom. Due to the
high energetic barrier between the two phases of carbon, the
transition from diamond to the stablest phase of graphite at normal
conditions is very slow. This transition can also occurs more rapidly,
when diamond is exposed to ion bombardment or high temperature for
example. Due to the high anisotropy in the graphite structure compared
to that of diamond, the electronic, mechanical and optical properties
of these two phases of carbon are very different. In table
2.1 few properties of diamond and graphite crystals are
presented. In the column related to graphite, the in-plane properties
appears on the left and the transverse one on the right.