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Computations were carried out for the three major crystallographic axes and for directions spanning the angles between them (see Ref. [112] for more details). These compare well with results of previous MD calculations [13] and with measurements [114], the results of which are all in the range of 35 to 80 eV.

114

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123

In our calculations for H at the BC site, we found two energy minima, displaced by $\sim$ 0.09 Å from the BC site along the C-C bond, that is at a distance of $\sim$ 1.08 Å from the nearest C atom (close to the average C-H bond in organic molecules). However, the energy difference between these two sites and the exact BC position was too small to be significantly resolved.

124

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125

This argument finds support in a previous study of H in silicon (C. G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. Pantelides, Phys. Rev. B 39, 10 791 (1989)), where it was shown that there exists almost degenerate minima which lie in a disk-shaped region centered at the BC site. The minima were found, in fact, slightly away from the BC position, however differing only a little in energy from the BC position.

126

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127

For , the energy difference between H at the BC site and H at the T$_{\rm d}$ site is found to be 2.7 eV, which is the highest value reported [77]. Thus, values of $\chi$ lower than 0.87 are meaningless.

128

We also compute, for comparison, the DOS for H at the T$_{\rm d}$ and BC sites. We find that H at the T$_{\rm d}$ site induces an electronic state 1.7 eV above the top of the valence band, while H on the BC site induces a state $\sim$ 0.5 eV above the middle of the energy gap. The relative positions of these levels resembles that computed for H in Si at these sites (C. G. Van de Walle, Y. Bar-Yam, and S. T. Pantelides, Phys. Rev. Lett. 60, 2761 (1988)).

129

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130

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